No. |
Part Name |
Description |
Manufacturer |
571 |
2N6269 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
572 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
573 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
574 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
575 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
576 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
577 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
578 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
579 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
580 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
581 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
582 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
583 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
584 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
585 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
586 |
2N6342A |
12-A silicon triac. 200 V. |
General Electric Solid State |
587 |
2N6343A |
12-A silicon triac. 400 V. |
General Electric Solid State |
588 |
2N6344A |
12-A silicon triac. 600 V. |
General Electric Solid State |
589 |
2N6345A |
12-A silicon triac. 800 V. |
General Electric Solid State |
590 |
2N6346A |
12-A silicon triac. 200 V. |
General Electric Solid State |
591 |
2N6347A |
12-A silicon triac. 400 V. |
General Electric Solid State |
592 |
2N6348A |
12-A silicon triac. 600 V. |
General Electric Solid State |
593 |
2N6349A |
12-A silicon triac. 800 V. |
General Electric Solid State |
594 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
595 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
596 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
597 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
598 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
599 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
600 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
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