| No. |
Part Name |
Description |
Manufacturer |
| 6841 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
| 6842 |
2N6395 |
Thyristor, 12 amperes, 100 volt |
Teccor Electronics |
| 6843 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
| 6844 |
2N6396 |
Thyristor, 12 amperes, 200 volt |
Teccor Electronics |
| 6845 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
| 6846 |
2N6397 |
Thyristor, 12 amperes, 400 volt |
Teccor Electronics |
| 6847 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
| 6848 |
2N6398 |
Thyristor, 12 amperes, 600 volt |
Teccor Electronics |
| 6849 |
2N6400 |
16A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
| 6850 |
2N6400 |
Thyristor, 16 amperes, 50 volt |
Teccor Electronics |
| 6851 |
2N6401 |
16A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
| 6852 |
2N6401 |
Thyristor, 16 amperes, 100 volt |
Teccor Electronics |
| 6853 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
| 6854 |
2N6402 |
Thyristor, 16 amperes, 200 volt |
Teccor Electronics |
| 6855 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
| 6856 |
2N6403 |
Thyristor, 16 amperes, 400 volt |
Teccor Electronics |
| 6857 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
| 6858 |
2N6404 |
Thyristor, 16 amperes, 600 volt |
Teccor Electronics |
| 6859 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 6860 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 6861 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 6862 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 6863 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
| 6864 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6865 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6866 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6867 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6868 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6869 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6870 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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