No. |
Part Name |
Description |
Manufacturer |
6811 |
2N6287 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
6812 |
2N6287 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
6813 |
2N6287 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
6814 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
6815 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
6816 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
6817 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
6818 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
6819 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
6820 |
2N6342A |
12-A silicon triac. 200 V. |
General Electric Solid State |
6821 |
2N6343A |
12-A silicon triac. 400 V. |
General Electric Solid State |
6822 |
2N6344A |
12-A silicon triac. 600 V. |
General Electric Solid State |
6823 |
2N6345A |
12-A silicon triac. 800 V. |
General Electric Solid State |
6824 |
2N6346A |
12-A silicon triac. 200 V. |
General Electric Solid State |
6825 |
2N6347A |
12-A silicon triac. 400 V. |
General Electric Solid State |
6826 |
2N6348A |
12-A silicon triac. 600 V. |
General Electric Solid State |
6827 |
2N6349A |
12-A silicon triac. 800 V. |
General Electric Solid State |
6828 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
6829 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
6830 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
6831 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
6832 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
6833 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
6834 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
6835 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
6836 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
6837 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
SGS Thomson Microelectronics |
6838 |
2N6388 |
SILICON NPN POWER DARLINGTON TRANSISTOR |
ST Microelectronics |
6839 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
6840 |
2N6394 |
Thyristor, 12 amperes, 50 volt |
Teccor Electronics |
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