No. |
Part Name |
Description |
Manufacturer |
6781 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
6782 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
6783 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
6784 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
6785 |
2N6128 |
Silicon NPN Power Transistor, TO-61 (isolated collector) package |
Silicon Transistor Corporation |
6786 |
2N6211 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
6787 |
2N6212 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
6788 |
2N6213 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
6789 |
2N6214 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
6790 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
6791 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
6792 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
6793 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
6794 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
6795 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
6796 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
6797 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
6798 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
6799 |
2N6262 |
High voltage silicon N-P-N transistor. 170V, 150W. |
General Electric Solid State |
6800 |
2N6263 |
Medium power silicon N-P-N transistor. 140V, 20W. |
General Electric Solid State |
6801 |
2N6264 |
Medium power silicon N-P-N transistor. 170V, 50W. |
General Electric Solid State |
6802 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
6803 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
6804 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
6805 |
2N6284 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
6806 |
2N6284 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
SGS Thomson Microelectronics |
6807 |
2N6284 |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
ST Microelectronics |
6808 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
6809 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
6810 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
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