No. |
Part Name |
Description |
Manufacturer |
6691 |
2N5816 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
6692 |
2N5817 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
6693 |
2N5818 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
6694 |
2N5819 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
6695 |
2N5820 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
6696 |
2N5821 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
6697 |
2N5822 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
6698 |
2N5823 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
6699 |
2N5830 |
NPN SILICON TRANSISTOR |
Micro Electronics |
6700 |
2N5831 |
NPN SILICON TRANSISTOR |
Micro Electronics |
6701 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
6702 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
6703 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
6704 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
6705 |
2N5884 |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS |
ST Microelectronics |
6706 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
6707 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
6708 |
2N5886 |
HIGH CURRENT SILICON NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
6709 |
2N5886 |
COMPLEMENTARY SILICON HIGH POWER TRANSISTOR |
ST Microelectronics |
6710 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
6711 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
6712 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
6713 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
6714 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
6715 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
6716 |
2N5957 |
Silicon NPN Power Transistor, TO-61 (isolated collector) package |
Silicon Transistor Corporation |
6717 |
2N6027 |
Programmable unijunction transistor. |
General Electric Solid State |
6718 |
2N6028 |
Programmable unijunction transistor. |
General Electric Solid State |
6719 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
6720 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
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