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Datasheets for LEC

Datasheets found :: 282173
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No. Part Name Description Manufacturer
6691 2N5816 SILICON AF MEDIUM POWER TRANSISTOR Micro Electronics
6692 2N5817 SILICON AF MEDIUM POWER TRANSISTOR Micro Electronics
6693 2N5818 SILICON AF MEDIUM POWER TRANSISTOR Micro Electronics
6694 2N5819 SILICON AF MEDIUM POWER TRANSISTOR Micro Electronics
6695 2N5820 SILICON AF MEDIUM POWER TRANSISTOR Micro Electronics
6696 2N5821 SILICON AF MEDIUM POWER TRANSISTOR Micro Electronics
6697 2N5822 SILICON AF MEDIUM POWER TRANSISTOR Micro Electronics
6698 2N5823 SILICON AF MEDIUM POWER TRANSISTOR Micro Electronics
6699 2N5830 NPN SILICON TRANSISTOR Micro Electronics
6700 2N5831 NPN SILICON TRANSISTOR Micro Electronics
6701 2N5838 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
6702 2N5839 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
6703 2N5840 High-voltage, high-power silicon N-P-N power transistor. General Electric Solid State
6704 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
6705 2N5884 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS ST Microelectronics
6706 2N5885 High-current, high-power, high-speed power transistor. 60V, 200W. General Electric Solid State
6707 2N5886 High-current, high-power, high-speed power transistor. 80V, 200W. General Electric Solid State
6708 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR SGS Thomson Microelectronics
6709 2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTOR ST Microelectronics
6710 2N5944 450-512MHz CLASS C 12.5V NPN transistor for mobile applications SGS Thomson Microelectronics
6711 2N5945 450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications SGS Thomson Microelectronics
6712 2N5946 450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications SGS Thomson Microelectronics
6713 2N5954 Silicon P-N-P medium-power transistor. -90V, 40W. General Electric Solid State
6714 2N5955 Silicon P-N-P medium-power transistor. -70V, 40W. General Electric Solid State
6715 2N5956 Silicon P-N-P medium-power transistor. -50V, 40W. General Electric Solid State
6716 2N5957 Silicon NPN Power Transistor, TO-61 (isolated collector) package Silicon Transistor Corporation
6717 2N6027 Programmable unijunction transistor. General Electric Solid State
6718 2N6028 Programmable unijunction transistor. General Electric Solid State
6719 2N6030 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
6720 2N6031 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola


Datasheets found :: 282173
Page: | 220 | 221 | 222 | 223 | 224 | 225 | 226 | 227 | 228 |



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