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Datasheets for LEC

Datasheets found :: 282173
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No. Part Name Description Manufacturer
6601 2N5447 SILICON GENERAL PURPOSE AF TRANSISTORS Micro Electronics
6602 2N5448 SILICON GENERAL PURPOSE AF TRANSISTORS Micro Electronics
6603 2N5449 SILICON GENERAL PURPOSE AF TRANSISTORS Micro Electronics
6604 2N5450 SILICON GENERAL PURPOSE AF TRANSISTORS Micro Electronics
6605 2N5484 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Micro Electronics
6606 2N5485 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Micro Electronics
6607 2N5486 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS Micro Electronics
6608 2N5490 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
6609 2N5491 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
6610 2N5492 Silicon N-P-N VERSAWATT transistor. 75V, 50W. General Electric Solid State
6611 2N5493 Silicon N-P-N VERSAWATT transistor. 75V, 50W. General Electric Solid State
6612 2N5494 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
6613 2N5495 Silicon N-P-N VERSAWATT transistor. 60V, 50W. General Electric Solid State
6614 2N5496 Silicon N-P-N VERSAWATT transistor. 90V, 50W. General Electric Solid State
6615 2N5497 Silicon N-P-N VERSAWATT transistor. 90V, 50W. General Electric Solid State
6616 2N5550 High Voltage Transistor Korea Electronics (KEC)
6617 2N5550 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
6618 2N5550 NPN EPITAXIAL SILICON TRANSISTOR Samsung Electronic
6619 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
6620 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
6621 2N5550 Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
6622 2N5550S High Voltage Transistor Korea Electronics (KEC)
6623 2N5551 High Voltage Transistor Korea Electronics (KEC)
6624 2N5551 SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS Micro Electronics
6625 2N5551 NPN Epitaxial Silicon Transistor Samsung Electronic
6626 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
6627 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
6628 2N5551 Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
6629 2N5551C High Voltage Transistor Korea Electronics (KEC)
6630 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics


Datasheets found :: 282173
Page: | 217 | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 |



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