No. |
Part Name |
Description |
Manufacturer |
6601 |
2N5447 |
SILICON GENERAL PURPOSE AF TRANSISTORS |
Micro Electronics |
6602 |
2N5448 |
SILICON GENERAL PURPOSE AF TRANSISTORS |
Micro Electronics |
6603 |
2N5449 |
SILICON GENERAL PURPOSE AF TRANSISTORS |
Micro Electronics |
6604 |
2N5450 |
SILICON GENERAL PURPOSE AF TRANSISTORS |
Micro Electronics |
6605 |
2N5484 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
6606 |
2N5485 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
6607 |
2N5486 |
N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS |
Micro Electronics |
6608 |
2N5490 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
6609 |
2N5491 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
6610 |
2N5492 |
Silicon N-P-N VERSAWATT transistor. 75V, 50W. |
General Electric Solid State |
6611 |
2N5493 |
Silicon N-P-N VERSAWATT transistor. 75V, 50W. |
General Electric Solid State |
6612 |
2N5494 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
6613 |
2N5495 |
Silicon N-P-N VERSAWATT transistor. 60V, 50W. |
General Electric Solid State |
6614 |
2N5496 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
6615 |
2N5497 |
Silicon N-P-N VERSAWATT transistor. 90V, 50W. |
General Electric Solid State |
6616 |
2N5550 |
High Voltage Transistor |
Korea Electronics (KEC) |
6617 |
2N5550 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
6618 |
2N5550 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
6619 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
6620 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
6621 |
2N5550 |
Amplifier transistor. Collector-emitter voltage: Vceo = 140V. Collector-base voltage: Vcbo = 160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
6622 |
2N5550S |
High Voltage Transistor |
Korea Electronics (KEC) |
6623 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
6624 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
6625 |
2N5551 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
6626 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
6627 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
6628 |
2N5551 |
Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
6629 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
6630 |
2N5551HR |
Hi-Rel NPN bipolar transistor 160 V, 0.5 A |
ST Microelectronics |
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