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Datasheets for LEC

Datasheets found :: 282173
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No. Part Name Description Manufacturer
6631 2N5551HRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6632 2N5551HRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6633 2N5551RHRG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6634 2N5551RHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6635 2N5551RUBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6636 2N5551RUBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6637 2N5551S High Voltage Transistor Korea Electronics (KEC)
6638 2N5551SC High Voltage Transistor Korea Electronics (KEC)
6639 2N5551SHRT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6640 2N5551UB1 Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6641 2N5551UBG Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6642 2N5551UBT Hi-Rel NPN bipolar transistor 160 V, 0.5 A ST Microelectronics
6643 2N5589 NPN planar RF transistor for FM mobile applications SGS Thomson Microelectronics
6644 2N5590 NPN planar RF transistor for FM mobile applications SGS Thomson Microelectronics
6645 2N5591 NPN planar RF transistor for FM mobile applications SGS Thomson Microelectronics
6646 2N5629 Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. General Electric Solid State
6647 2N5630 Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. General Electric Solid State
6648 2N5630 Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
6649 2N5631 Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. General Electric Solid State
6650 2N5631 Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Motorola
6651 2N5635 WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor SGS Thomson Microelectronics
6652 2N5636 WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor SGS Thomson Microelectronics
6653 2N5637 WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor SGS Thomson Microelectronics
6654 2N5641 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor SGS Thomson Microelectronics
6655 2N5641 7W / 20W / 40W, 28V, VHF POWER TRANSISTOR ST Microelectronics
6656 2N5642 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor SGS Thomson Microelectronics
6657 2N5642 7W / 20W / 40W, 28V, VHF POWER TRANSISTOR ST Microelectronics
6658 2N5643 NPN RF transistor 28V Class C 40W SGS Thomson Microelectronics
6659 2N5643 V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor SGS Thomson Microelectronics
6660 2N5643 7W / 20W / 40W, 28V, VHF POWER TRANSISTOR ST Microelectronics


Datasheets found :: 282173
Page: | 218 | 219 | 220 | 221 | 222 | 223 | 224 | 225 | 226 |



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