| No. |
Part Name |
Description |
Manufacturer |
| 6571 |
2N5401 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6572 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6573 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6574 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6575 |
2N5401C |
High Voltage Transistor |
Korea Electronics (KEC) |
| 6576 |
2N5401HR |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6577 |
2N5401HRG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6578 |
2N5401HRT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6579 |
2N5401RHRG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6580 |
2N5401RHRT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6581 |
2N5401RUBG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6582 |
2N5401RUBT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6583 |
2N5401S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 6584 |
2N5401UB1 |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6585 |
2N5401UBG |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6586 |
2N5401UBT |
Hi-Rel PNP bipolar transistor 150 V, 0.5 A |
ST Microelectronics |
| 6587 |
2N5415 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
| 6588 |
2N5415 |
SILICON PNP TRANSISTORS |
SGS Thomson Microelectronics |
| 6589 |
2N5415 |
SILICON PNP TRANSISTORS |
ST Microelectronics |
| 6590 |
2N5415S |
HIGH-VOLTAGE AMPLIFIER |
SGS Thomson Microelectronics |
| 6591 |
2N5415S |
HIGH-VOLTAGE AMPLIFIER |
ST Microelectronics |
| 6592 |
2N5416 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
| 6593 |
2N5416 |
SILICON PNP TRANSISTORS |
SGS Thomson Microelectronics |
| 6594 |
2N5416 |
SILICON PNP TRANSISTORS |
ST Microelectronics |
| 6595 |
2N5441 |
40-A Silicon Triacs |
General Electric Solid State |
| 6596 |
2N5442 |
40-A Silicon Triacs |
General Electric Solid State |
| 6597 |
2N5443 |
40-A Silicon Triacs |
General Electric Solid State |
| 6598 |
2N5444 |
40-A Silicon Triacs |
General Electric Solid State |
| 6599 |
2N5445 |
40-A Silicon Triacs |
General Electric Solid State |
| 6600 |
2N5446 |
40-A Silicon Triacs |
General Electric Solid State |
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