| No. |
Part Name |
Description |
Manufacturer |
| 6541 |
2N5323 |
General purpose P-N-P silicon power transistor. |
General Electric Solid State |
| 6542 |
2N5323 |
SMALL SIGNAL PNP TRANSISTORS |
SGS Thomson Microelectronics |
| 6543 |
2N5323 |
SMALL SIGNAL PNP TRANSISTORS |
ST Microelectronics |
| 6544 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 6545 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 6546 |
2N5346 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 6547 |
2N5347 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 6548 |
2N5348 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 6549 |
2N5349 |
Silicon NPN Power Transistor, TO-111 (isolated collector) package |
Silicon Transistor Corporation |
| 6550 |
2N5365 |
SILICON TRANSISTORS |
General Electric Solid State |
| 6551 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
| 6552 |
2N5367 |
PNP SILICON TRANSISTOR |
Micro Electronics |
| 6553 |
2N5367(R) |
PNP SILICON PLANAR TRANSISTOR |
Micro Electronics |
| 6554 |
2N5368 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6555 |
2N5369 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6556 |
2N5370 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6557 |
2N5371 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6558 |
2N5372 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6559 |
2N5373 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6560 |
2N5374 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6561 |
2N5375 |
SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6562 |
2N5400 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 6563 |
2N5400 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 6564 |
2N5400 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6565 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6566 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6567 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6568 |
2N5400S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 6569 |
2N5401 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 6570 |
2N5401 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
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