| No. |
Part Name |
Description |
Manufacturer |
| 7141 |
SS16-T1 |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
| 7142 |
SS16-T3 |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
| 7143 |
SS16_NL |
1.0 Ampere Schottky Barrier Rectifiers |
Fairchild Semiconductor |
| 7144 |
SS18 |
1.0 AMP. SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
Jinan Gude Electronic Device |
| 7145 |
SS18 |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere |
Surge Components |
| 7146 |
SS18-T1 |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
| 7147 |
SS18-T3 |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
| 7148 |
SS19 |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE - 20 to 100 Volts CURRENT - 1.0 Ampere |
Surge Components |
| 7149 |
SS19-T1 |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
| 7150 |
SS19-T3 |
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
Won-Top Electronics |
| 7151 |
SS1H10 |
High Voltage Surface Mount Schottky Rectifier, Forward Current 1.0A |
Vishay |
| 7152 |
SS1H9 |
High Voltage Surface Mount Schottky Rectifier, Forward Current 1.0A |
Vishay |
| 7153 |
STB6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 7154 |
STB6NC60 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
ST Microelectronics |
| 7155 |
STB6NC60-1 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
SGS Thomson Microelectronics |
| 7156 |
STB6NC60-1 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
ST Microelectronics |
| 7157 |
STB6NC60T4 |
N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET |
ST Microelectronics |
| 7158 |
STB7NB60 |
N - CHANNEL 600V - 1.0 OMH - 7.2A - I 2 PAK/D 2 PAK PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 7159 |
STD150 ASIC |
STD150 Brochure Rev. 1.0 |
Samsung Electronic |
| 7160 |
STD6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 7161 |
STDL130 ASIC |
Version 1.0 (1'st edition - Jan. 9th, 2001) |
Samsung Electronic |
| 7162 |
STF6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 7163 |
STFLAFM10/SW |
ADAPTIVE FUZZY MODELLER 1.0 |
SGS Thomson Microelectronics |
| 7164 |
STG3856 |
Low voltage 1.0Ω max dual SP3T switch with break-before-make feature |
ST Microelectronics |
| 7165 |
STG3856QTR |
Low voltage 1.0Ω max dual SP3T switch with break-before-make feature |
ST Microelectronics |
| 7166 |
STH7NA90FI |
N - CHANNEL 900V - 1.05 Ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET |
SGS Thomson Microelectronics |
| 7167 |
STK433 |
AF Power Amplifier (5W + 5W min, THD = 1.0%) |
SANYO |
| 7168 |
STK4332 |
AF Power Amplifier (5W + 5W min, THD = 1.0%) |
SANYO |
| 7169 |
STK4352 |
AF Power Amplifier (7W + 7W min, THD = 1.0%) |
SANYO |
| 7170 |
STK4362 |
AF Power Amplifier (10W + 10W min, THD = 1.0%) |
SANYO |
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