| No. |
Part Name |
Description |
Manufacturer |
| 7231 |
TA8080 |
1.0A MOTOR DRIVER WITH BRAKE FUNCTION |
TOSHIBA |
| 7232 |
TA8080K |
1.0A MOTOR DRIVER WITH BRAKE FUNCTION |
TOSHIBA |
| 7233 |
TAP4813 |
15 Watt, input voltage range:36-75V, output voltage 15V (1.0A) DC/DC converter |
Traco Electronic AG |
| 7234 |
TC-200-CFC-416A-311.04MHZ |
Temperature Compensated Crystal Oscillators |
Vectron |
| 7235 |
TC-200-CFC-416B-311.04MHZ |
Temperature Compensated Crystal Oscillators |
Vectron |
| 7236 |
TC-200-CFF-416A-311.04MHZ |
Temperature Compensated Crystal Oscillators |
Vectron |
| 7237 |
TC-200-CFF-416B-311.04MHZ |
Temperature Compensated Crystal Oscillators |
Vectron |
| 7238 |
TC-200-DFC-416A-311.04MHZ |
Temperature Compensated Crystal Oscillators |
Vectron |
| 7239 |
TC-200-DFC-416B-311.04MHZ |
Temperature Compensated Crystal Oscillators |
Vectron |
| 7240 |
TC-200-DFF-416A-311.04MHZ |
Temperature Compensated Crystal Oscillators |
Vectron |
| 7241 |
TC-200-DFF-416B-311.04MHZ |
Temperature Compensated Crystal Oscillators |
Vectron |
| 7242 |
TC14L010 |
1 K usable gate, 1.0 micron, CMOS gate array |
TOSHIBA |
| 7243 |
TC14L020 |
2 K usable gate, 1.0 micron, CMOS gate array |
TOSHIBA |
| 7244 |
TC14L040 |
4 K usable gate, 1.0 micron, CMOS gate array |
TOSHIBA |
| 7245 |
TC14L050 |
5 K usable gate, 1.0 micron, CMOS gate array |
TOSHIBA |
| 7246 |
TC14L060 |
6 K usable gate, 1.0 micron, CMOS gate array |
TOSHIBA |
| 7247 |
TC14L070 |
7 K usable gate, 1.0 micron, CMOS gate array |
TOSHIBA |
| 7248 |
TC14L080 |
8 K usable gate, 1.0 micron, CMOS gate array |
TOSHIBA |
| 7249 |
TC14L100 |
8 K usable gate, 1.0 micron, CMOS gate array |
TOSHIBA |
| 7250 |
TC528128BJ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 7251 |
TC528128BJ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 7252 |
TC528128BJ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 7253 |
TC528128BJ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 7254 |
TC528128BZ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 7255 |
TC528128BZ-10 |
100ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 7256 |
TC528128BZ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 7257 |
TC528128BZ-80 |
80ns; V(cc): -1 to +7V; V(in/out); -1.0 to +7.0V; 1W; 50mA; silicon gate CMOS 131.072 words x 8 Bits multiport DRAM |
TOSHIBA |
| 7258 |
TC54VC2101ECB |
Voltage detector. Detected voltage 2.1V. Output form: CMOS output. Tolerance +-1.0%. |
TelCom Semiconductor |
| 7259 |
TC54VC2101EMB |
Voltage detector. Detected voltage 2.1V. Output form: CMOS output. Tolerance +-1.0%. |
TelCom Semiconductor |
| 7260 |
TC54VC2101EZB |
Voltage detector. Detected voltage 2.1V. Output form: CMOS output . Tolerance +-1.0%. |
TelCom Semiconductor |
| | | |
