No. |
Part Name |
Description |
Manufacturer |
7201 |
T14M256A-8J |
8ns; -0.5 to 7.0V; 1.0W; 50mA; 32 x 8 high speed CMOS static RAM |
TM Technology |
7202 |
T14M256A-8P |
8ns; -0.5 to 7.0V; 1.0W; 50mA; 32 x 8 high speed CMOS static RAM |
TM Technology |
7203 |
T221160A-30J |
30ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
7204 |
T221160A-30S |
30ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
7205 |
T221160A-35J |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
7206 |
T221160A-35S |
35ns; 4.5 to 5.5V; 1.0W; 64K x 16 dynamic RAM: fast page mode |
TM Technology |
7207 |
T224162B |
4.5 to 5.5V; 1.0W; 256K x 16 dynamic RAM: EDO page mode |
TM Technology |
7208 |
T2316405A |
0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode |
TM Technology |
7209 |
T2316407A |
0.5 to 4.6V; 1.0W; 4M x 4 dynamic RAM: EDO page mode |
TM Technology |
7210 |
T35L3232B-3.8Q |
0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode |
TM Technology |
7211 |
T35L3232B-4T |
0.5 to 4.6V; 1.0W; 32K x 32 SRAM: pipelined and flow- through burst mode |
TM Technology |
7212 |
T4312816A-10S |
100MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7213 |
T4312816A-10S |
100MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7214 |
T4312816A-6S |
166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7215 |
T4312816A-6S |
166MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7216 |
T4312816A-7.5S |
133MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7217 |
T4312816A-7.5S |
133MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7218 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7219 |
T4312816A-7S |
143MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7220 |
T4312816A-8S |
125MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7221 |
T4312816A-8S |
125MHz; 1.0 to 4.6V; 1.0W; 8M x 16 SDRAM: 2M x 16bit x 4banks synchronous DRAM |
TM Technology |
7222 |
T431616A-7C |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
7223 |
T431616A-7C |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
7224 |
T431616A-7CI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
7225 |
T431616A-7CI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
7226 |
T431616A-7S |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
7227 |
T431616A-7S |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
7228 |
T431616A-7SI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
7229 |
T431616A-7SI |
7ns; 1.0 to 4.6V; 1.0W; 1M x 16 SDRAM: 512K x 16bit x 2banks synchronous DRAM |
TM Technology |
7230 |
TA1.0 |
HIGH-ENERGY TRIGGERED SPARK GAPS |
Clare Inc |
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