No. |
Part Name |
Description |
Manufacturer |
751 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
752 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
753 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
754 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
755 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
756 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
757 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
758 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
759 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
760 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
761 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
762 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
763 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
764 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
765 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
766 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
767 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
768 |
2N6211 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
769 |
2N6212 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
770 |
2N6213 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
771 |
2N6214 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
772 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
773 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
774 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
775 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
776 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
777 |
2N6251 |
450V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
778 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
779 |
2N6254 |
High-power silicon N-P-N transistor. 100V, 150W. |
General Electric Solid State |
780 |
2N6259 |
High voltage, high power transistor. 170V, 250W. |
General Electric Solid State |
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