No. |
Part Name |
Description |
Manufacturer |
811 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
812 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
813 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
814 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
815 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
816 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
817 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
818 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
819 |
2N6389 |
UHF/MATV Low-Noise Silicon NPN RF transistor |
RCA Solid State |
820 |
2N6390 |
2-GHz, Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
821 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
822 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
823 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
824 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
825 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
826 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
827 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
828 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
829 |
2N6400 |
16A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
830 |
2N6401 |
16A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
831 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
832 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
833 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
834 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
835 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
836 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
837 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
838 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
839 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
840 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
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