No. |
Part Name |
Description |
Manufacturer |
871 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
872 |
2N6667 |
10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
873 |
2N6668 |
10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
874 |
2N6671 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
875 |
2N6672 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
876 |
2N6673 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
877 |
2N6676 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
878 |
2N6677 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
879 |
2N6678 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
880 |
2N6686 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
881 |
2N6687 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
882 |
2N6688 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
883 |
2N6702 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
884 |
2N6703 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
885 |
2N6704 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
886 |
2N6751 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
887 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
888 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
889 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
890 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
891 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
892 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
893 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
894 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
895 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
896 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
897 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
898 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
899 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
900 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
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