No. |
Part Name |
Description |
Manufacturer |
841 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
842 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
843 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
844 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
845 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
846 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
847 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
848 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
849 |
2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
850 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
851 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
852 |
2N6105 |
60- and 100-Watt Broadband (225-to-400-MHz) Push-Pull RF Amplifiers Using RCA-2N6105 VHF/UHF Power Transistors - App. Note |
RCA Solid State |
853 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
854 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
855 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
856 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
857 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
858 |
2N6108 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
859 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
860 |
2N6110 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
861 |
2N6111 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. |
General Electric Solid State |
862 |
2N6121 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. |
General Electric Solid State |
863 |
2N6122 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
864 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
865 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
866 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
867 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
868 |
2N6188 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
869 |
2N6189 |
100 V, 10 A high speed PNP transistor |
Solid State Devices Inc |
870 |
2N6192 |
100 V, 5 A high speed PNP transistor |
Solid State Devices Inc |
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