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Datasheets for OLID

Datasheets found :: 6408
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No. Part Name Description Manufacturer
901 2N6288 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
902 2N6289 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. General Electric Solid State
903 2N6290 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
904 2N6291 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
905 2N6292 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
906 2N6293 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State
907 2N6322 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
908 2N6324 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
909 2N6342A 12-A silicon triac. 200 V. General Electric Solid State
910 2N6343A 12-A silicon triac. 400 V. General Electric Solid State
911 2N6344A 12-A silicon triac. 600 V. General Electric Solid State
912 2N6345A 12-A silicon triac. 800 V. General Electric Solid State
913 2N6346A 12-A silicon triac. 200 V. General Electric Solid State
914 2N6347A 12-A silicon triac. 400 V. General Electric Solid State
915 2N6348A 12-A silicon triac. 600 V. General Electric Solid State
916 2N6349A 12-A silicon triac. 800 V. General Electric Solid State
917 2N6354 120V, 10A, 140W silicon N-P-N planar transistor. General Electric Solid State
918 2N6371 High-power silicon N-P-N transistor. 50V, 117W. General Electric Solid State
919 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
920 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
921 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
922 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
923 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
924 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
925 2N6389 UHF/MATV Low-Noise Silicon NPN RF transistor RCA Solid State
926 2N6390 2-GHz, Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
927 2N6391 5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
928 2N6392 10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
929 2N6393 10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
930 2N6394 12A silicon controlled rectifier. Vrsom 75V. General Electric Solid State


Datasheets found :: 6408
Page: | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 | 35 |



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