No. |
Part Name |
Description |
Manufacturer |
901 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
902 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
903 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
904 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
905 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
906 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
907 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
908 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
909 |
2N6342A |
12-A silicon triac. 200 V. |
General Electric Solid State |
910 |
2N6343A |
12-A silicon triac. 400 V. |
General Electric Solid State |
911 |
2N6344A |
12-A silicon triac. 600 V. |
General Electric Solid State |
912 |
2N6345A |
12-A silicon triac. 800 V. |
General Electric Solid State |
913 |
2N6346A |
12-A silicon triac. 200 V. |
General Electric Solid State |
914 |
2N6347A |
12-A silicon triac. 400 V. |
General Electric Solid State |
915 |
2N6348A |
12-A silicon triac. 600 V. |
General Electric Solid State |
916 |
2N6349A |
12-A silicon triac. 800 V. |
General Electric Solid State |
917 |
2N6354 |
120V, 10A, 140W silicon N-P-N planar transistor. |
General Electric Solid State |
918 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
919 |
2N6383 |
10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
920 |
2N6384 |
10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
921 |
2N6385 |
10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. |
General Electric Solid State |
922 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
923 |
2N6387 |
10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
924 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
925 |
2N6389 |
UHF/MATV Low-Noise Silicon NPN RF transistor |
RCA Solid State |
926 |
2N6390 |
2-GHz, Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
927 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
928 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
929 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
930 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
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