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Datasheets for OLID

Datasheets found :: 6408
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No. Part Name Description Manufacturer
871 2N6193 100 V, 5 A high speed PNP transistor Solid State Devices Inc
872 2N6211 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
873 2N6212 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
874 2N6213 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
875 2N6214 High-voltage, medium-power silicon P-N-P transistor. General Electric Solid State
876 2N6246 Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. General Electric Solid State
877 2N6247 Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. General Electric Solid State
878 2N6248 Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. General Electric Solid State
879 2N6249 300V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
880 2N6250 375V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
881 2N6251 450V, 30A, 175W silicon N-P-N switcing transistor. General Electric Solid State
882 2N6253 High-power silicon N-P-N transistor. 55V, 115W. General Electric Solid State
883 2N6254 High-power silicon N-P-N transistor. 100V, 150W. General Electric Solid State
884 2N6259 High voltage, high power transistor. 170V, 250W. General Electric Solid State
885 2N6262 High voltage silicon N-P-N transistor. 170V, 150W. General Electric Solid State
886 2N6263 Medium power silicon N-P-N transistor. 140V, 20W. General Electric Solid State
887 2N6264 Medium power silicon N-P-N transistor. 170V, 50W. General Electric Solid State
888 2N6265 2W 2GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
889 2N6266 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
890 2N6266 5-W, 2-GHz, Emitter-Balasted Silicon N-P-N Overlay RF Transistor RCA Solid State
891 2N6267 10-, 16-, 30-, and 60-Watt Broadband (620-to-960-MHz) Power Amplifiers Using the RCA-2N6266 and 2N6267 Microwave Power Transistors - App. Note RCA Solid State
892 2N6267 10W, 2GHz, Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
893 2N6268 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
894 2N6269 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
895 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
896 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
897 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
898 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
899 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
900 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State


Datasheets found :: 6408
Page: | 26 | 27 | 28 | 29 | 30 | 31 | 32 | 33 | 34 |



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