No. |
Part Name |
Description |
Manufacturer |
8851 |
2N6710 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
8852 |
2N6714 |
0.750W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
8853 |
2N6715 |
0.750W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 1.500A Ic, 55 - hFE |
Continental Device India Limited |
8854 |
2N6716 |
0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE |
Continental Device India Limited |
8855 |
2N6717 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
8856 |
2N6718 |
0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
8857 |
2N6719 |
0.850W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 25 - hFE |
Continental Device India Limited |
8858 |
2N6726 |
0.850W General Purpose PNP Plastic Leaded Transistor. 30V Vceo, 2.000A Ic, 55 - hFE |
Continental Device India Limited |
8859 |
2N6727 |
0.850W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 1.000A Ic, 55 - hFE |
Continental Device India Limited |
8860 |
2N6728 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
8861 |
2N6729 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
8862 |
2N6730 |
0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
8863 |
2N6738 |
POWER TRANSISTORS(8.0A,100W) |
MOSPEC Semiconductor |
8864 |
2N6739 |
POWER TRANSISTORS(8.0A,100W) |
MOSPEC Semiconductor |
8865 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
8866 |
2N6740 |
POWER TRANSISTORS(8.0A,100W) |
MOSPEC Semiconductor |
8867 |
2N6751 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
8868 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
8869 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
8870 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
8871 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
8872 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
8873 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
8874 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
8875 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
8876 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
8877 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
8878 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
8879 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
8880 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
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