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Datasheets for C

Datasheets found :: 371126
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No. Part Name Description Manufacturer
8881 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
8882 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
8883 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8884 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
8885 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
8886 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
8887 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
8888 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
8889 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
8890 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
8891 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
8892 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
8893 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
8894 2N681 25A silicon controlled rectifier. Vrsom 35V. General Electric Solid State
8895 2N682 25A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
8896 2N683 25A silicon controlled rectifier. Vrsom 150V. General Electric Solid State
8897 2N684 25A silicon controlled rectifier. Vrsom 225V. General Electric Solid State
8898 2N685 25A silicon controlled rectifier. Vrsom 300V. General Electric Solid State
8899 2N686 25A silicon controlled rectifier. Vrsom 350V. General Electric Solid State
8900 2N687 25A silicon controlled rectifier. Vrsom 400V. General Electric Solid State
8901 2N688 25A silicon controlled rectifier. Vrsom 500V. General Electric Solid State
8902 2N689 25A silicon controlled rectifier. Vrsom 600V. General Electric Solid State
8903 2N690 25A silicon controlled rectifier. Vrsom 720V. General Electric Solid State
8904 2N691 25A silicon controlled rectifier. Vrsom 840V. General Electric Solid State
8905 2N692 25A silicon controlled rectifier. Vrsom 960V. General Electric Solid State
8906 2N6962 MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable Siliconix
8907 2N697 Silicon N-P-N planar transistor. General Electric Solid State
8908 2N7002E N-channel TrenchMOS logic level FET NXP Semiconductors
8909 2N7002E TrenchMOS(tm) Logic Level FET Philips
8910 2N7002F N-channel TrenchMOS logic level FET NXP Semiconductors


Datasheets found :: 371126
Page: | 293 | 294 | 295 | 296 | 297 | 298 | 299 | 300 | 301 |



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