No. |
Part Name |
Description |
Manufacturer |
8881 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
8882 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
8883 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
8884 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
8885 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
8886 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
8887 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
8888 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
8889 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
8890 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
8891 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
8892 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
8893 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
8894 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
8895 |
2N682 |
25A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
8896 |
2N683 |
25A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
8897 |
2N684 |
25A silicon controlled rectifier. Vrsom 225V. |
General Electric Solid State |
8898 |
2N685 |
25A silicon controlled rectifier. Vrsom 300V. |
General Electric Solid State |
8899 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
8900 |
2N687 |
25A silicon controlled rectifier. Vrsom 400V. |
General Electric Solid State |
8901 |
2N688 |
25A silicon controlled rectifier. Vrsom 500V. |
General Electric Solid State |
8902 |
2N689 |
25A silicon controlled rectifier. Vrsom 600V. |
General Electric Solid State |
8903 |
2N690 |
25A silicon controlled rectifier. Vrsom 720V. |
General Electric Solid State |
8904 |
2N691 |
25A silicon controlled rectifier. Vrsom 840V. |
General Electric Solid State |
8905 |
2N692 |
25A silicon controlled rectifier. Vrsom 960V. |
General Electric Solid State |
8906 |
2N6962 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 30A, Parametric limits in accordance with MIL-S-19500/568 where applicable |
Siliconix |
8907 |
2N697 |
Silicon N-P-N planar transistor. |
General Electric Solid State |
8908 |
2N7002E |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
8909 |
2N7002E |
TrenchMOS(tm) Logic Level FET |
Philips |
8910 |
2N7002F |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
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