No. |
Part Name |
Description |
Manufacturer |
8791 |
2N6515 |
0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFE |
Continental Device India Limited |
8792 |
2N6516 |
0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
8793 |
2N6517 |
0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
8794 |
2N6519 |
0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE |
Continental Device India Limited |
8795 |
2N6520 |
0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE |
Continental Device India Limited |
8796 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
8797 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
8798 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
8799 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
8800 |
2N6542 |
3A power-switching N-P-N transistor. |
General Electric Solid State |
8801 |
2N6542 |
POWER TRANSISTORS(5A,100W) |
MOSPEC Semiconductor |
8802 |
2N6543 |
POWER TRANSISTORS(5A,100W) |
MOSPEC Semiconductor |
8803 |
2N6544 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
8804 |
2N6544 |
POWER TRANSISTORS(8A,125W) |
MOSPEC Semiconductor |
8805 |
2N6545 |
5A power-switching N-P-N transistor. |
General Electric Solid State |
8806 |
2N6545 |
POWER TRANSISTORS(8A,125W) |
MOSPEC Semiconductor |
8807 |
2N6546 |
10A power-switching N-P-N transistor. |
General Electric Solid State |
8808 |
2N6546 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
8809 |
2N6547 |
POWER TRANSISTORS(15A,175W) |
MOSPEC Semiconductor |
8810 |
2N6569 |
POWER TRANSISTORS(12A,40V,100W) |
MOSPEC Semiconductor |
8811 |
2N6576 |
15 A N-P-N darlington power transistor. 60 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
8812 |
2N6577 |
15 A N-P-N darlington power transistor. 90 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
8813 |
2N6578 |
15 A N-P-N darlington power transistor. 120 V. 120 W. Gain of 2000 at 4 A. |
General Electric Solid State |
8814 |
2N6594 |
POWER TRANSISTORS(12A,40V,100W) |
MOSPEC Semiconductor |
8815 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
8816 |
2N6609 |
POWER TRANSISTORS(16A,140V,150W) |
MOSPEC Semiconductor |
8817 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
8818 |
2N6648 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
8819 |
2N6649 |
10 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
8820 |
2N6649 |
POWER TRANSISTORS(10A,100W) |
MOSPEC Semiconductor |
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