DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for C

Datasheets found :: 371126
Page: | 287 | 288 | 289 | 290 | 291 | 292 | 293 | 294 | 295 |
No. Part Name Description Manufacturer
8701 2N6371 High-power silicon N-P-N transistor. 50V, 117W. General Electric Solid State
8702 2N6383 10 A N-P-N darlington power transistor. 40 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
8703 2N6383 POWER TRANSISTORS(10A,100W) MOSPEC Semiconductor
8704 2N6384 10 A N-P-N darlington power transistor. 60 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
8705 2N6384 POWER TRANSISTORS(10A,100W) MOSPEC Semiconductor
8706 2N6385 10 A N-P-N darlington power transistor. 80 V. 100 W. Gain of 1000 at 5 A. General Electric Solid State
8707 2N6385 POWER TRANSISTORS(10A,100W) MOSPEC Semiconductor
8708 2N6386 10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. General Electric Solid State
8709 2N6386 POWER TRANSISTORS(65W) MOSPEC Semiconductor
8710 2N6386 Plastic 65W medium-power NPN silicon transistor Motorola
8711 2N6386 Silicon NPN Power Transistors TO-220C package Savantic
8712 2N6386 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
8713 2N6387 10 A N-P-N darlington power transistor. 60 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
8714 2N6387 POWER TRANSISTORS(65W) MOSPEC Semiconductor
8715 2N6387 Plastic 65W medium-power NPN silicon transistor Motorola
8716 2N6387 Silicon NPN Power Transistors TO-220C package Savantic
8717 2N6387 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
8718 2N6387-D Plastic Medium-Power Silicon Transistors ON Semiconductor
8719 2N6388 10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. General Electric Solid State
8720 2N6388 POWER TRANSISTORS(65W) MOSPEC Semiconductor
8721 2N6388 Plastic 65W medium-power NPN silicon transistor Motorola
8722 2N6388 Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration SGS-ATES
8723 2N6394 12A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
8724 2N6395 12A silicon controlled rectifier. Vrsom 125V. General Electric Solid State
8725 2N6396 12A silicon controlled rectifier. Vrsom 250V. General Electric Solid State
8726 2N6397 12A silicon controlled rectifier. Vrsom 450V. General Electric Solid State
8727 2N6398 12A silicon controlled rectifier. Vrsom 650V. General Electric Solid State
8728 2N6400 16A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
8729 2N6401 16A silicon controlled rectifier. Vrsom 125V. General Electric Solid State
8730 2N6402 16A silicon controlled rectifier. Vrsom 250V. General Electric Solid State


Datasheets found :: 371126
Page: | 287 | 288 | 289 | 290 | 291 | 292 | 293 | 294 | 295 |



© 2024 - www Datasheet Catalog com