No. |
Part Name |
Description |
Manufacturer |
8641 |
2N6288 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
8642 |
2N6288 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
8643 |
2N6289 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
8644 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
8645 |
2N6290 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
8646 |
2N6290 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
8647 |
2N6290 |
7A complementary silicon plastic 65W power NPN transistor |
Motorola |
8648 |
2N6290 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
8649 |
2N6290 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
8650 |
2N6291 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. |
General Electric Solid State |
8651 |
2N6292 |
40.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
8652 |
2N6292 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
8653 |
2N6292 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
8654 |
2N6292 |
7A complementary silicon plastic 65W power NPN transistor |
Motorola |
8655 |
2N6292 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
8656 |
2N6292 |
Epitaxial-base silicon NPN transistor in Jedec TO-220 plastic package |
SGS-ATES |
8657 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
8658 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
8659 |
2N6293 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
8660 |
2N6298 |
POWER TRANSISTORS(8A, 75W) |
MOSPEC Semiconductor |
8661 |
2N6299 |
POWER TRANSISTORS(8A, 75W) |
MOSPEC Semiconductor |
8662 |
2N6300 |
POWER TRANSISTORS(8A, 75W) |
MOSPEC Semiconductor |
8663 |
2N6301 |
POWER TRANSISTORS(8A, 75W) |
MOSPEC Semiconductor |
8664 |
2N6303 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
8665 |
2N6312 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
8666 |
2N6313 |
POWER TRANSISTORS(5A,75W) |
MOSPEC Semiconductor |
8667 |
2N6314 |
POWER TRANSISTORS(5A,75W) |
MOSPEC Semiconductor |
8668 |
2N6315 |
POWER TRANSISTORS(7.0A,90W) |
MOSPEC Semiconductor |
8669 |
2N6316 |
POWER TRANSISTORS(7.0A,90W) |
MOSPEC Semiconductor |
8670 |
2N6317 |
POWER TRANSISTORS(7.0A,90W) |
MOSPEC Semiconductor |
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