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Datasheets for C

Datasheets found :: 371126
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No. Part Name Description Manufacturer
8551 2N6107 PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. USHA India LTD
8552 2N6107 PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. USHA India LTD
8553 2N6107 PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. USHA India LTD
8554 2N6107-D Complementary Silicon Plastic Power Transistors ON Semiconductor
8555 2N6108 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
8556 2N6109 40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. Continental Device India Limited
8557 2N6109 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. General Electric Solid State
8558 2N6109 POWER TRANSISTORS(7A,40W) MOSPEC Semiconductor
8559 2N6109 7A complementary silicon plastic 65W power PNP transistor Motorola
8560 2N6109 Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package SGS-ATES
8561 2N6109 Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package SGS-ATES
8562 2N6110 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
8563 2N6111 40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Continental Device India Limited
8564 2N6111 Epitaxial-base, silicon P-N-P VERSAWATT transistor. -40V. General Electric Solid State
8565 2N6111 POWER TRANSISTORS(7A,40W) MOSPEC Semiconductor
8566 2N6111 7A complementary silicon plastic 65W power PNP transistor Motorola
8567 2N6111 Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package SGS-ATES
8568 2N6111 Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package SGS-ATES
8569 2N6121 40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. Continental Device India Limited
8570 2N6121 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 45V. General Electric Solid State
8571 2N6121 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS MOSPEC Semiconductor
8572 2N6121 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS MOSPEC Semiconductor
8573 2N6121 4A complementary silicon plastic 40W power NPN transistor Motorola
8574 2N6122 40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. Continental Device India Limited
8575 2N6122 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 60V. General Electric Solid State
8576 2N6122 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS MOSPEC Semiconductor
8577 2N6122 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS MOSPEC Semiconductor
8578 2N6122 4A complementary silicon plastic 40W power NPN transistor Motorola
8579 2N6123 40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
8580 2N6123 Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. General Electric Solid State


Datasheets found :: 371126
Page: | 282 | 283 | 284 | 285 | 286 | 287 | 288 | 289 | 290 |



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