No. |
Part Name |
Description |
Manufacturer |
8431 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
8432 |
2N5886 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
8433 |
2N5902 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
8434 |
2N5902 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
8435 |
2N5903 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
8436 |
2N5903 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
8437 |
2N5904 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
8438 |
2N5904 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
8439 |
2N5905 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
8440 |
2N5905 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
8441 |
2N5905 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
8442 |
2N5906 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
8443 |
2N5906 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
8444 |
2N5906 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
8445 |
2N5907 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
8446 |
2N5907 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
8447 |
2N5907 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
8448 |
2N5908 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
8449 |
2N5908 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
8450 |
2N5908 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
8451 |
2N5909 |
MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
Intersil |
8452 |
2N5909 |
Low Leakage, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
8453 |
2N5909 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
8454 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
8455 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
8456 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
8457 |
2N5913 |
Silicon NPN Overalay RF Transistor, 12.5 Volt, for class-C VHF/UHF amplifiers |
RCA Solid State |
8458 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
8459 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
8460 |
2N5944 |
450-512MHz CLASS C 12.5V NPN transistor for mobile applications |
SGS Thomson Microelectronics |
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