| No. |
Part Name |
Description |
Manufacturer |
| 8401 |
2N5745 |
POWER TRANSISTORS(200W) |
MOSPEC Semiconductor |
| 8402 |
2N5754 |
2.5-A silicon triac. Voltage(typ) 100 V. |
General Electric Solid State |
| 8403 |
2N5755 |
2.5-A silicon triac. Voltage(typ) 200 V. |
General Electric Solid State |
| 8404 |
2N5756 |
2.5-A silicon triac. Voltage(typ) 400 V. |
General Electric Solid State |
| 8405 |
2N5757 |
2.5-A silicon triac. Voltage(typ) 600 V. |
General Electric Solid State |
| 8406 |
2N5770 |
0.350W General Purpose NPN Plastic Leaded Transistor. 15V Vceo, 0.050A Ic, 50 - 200 hFE |
Continental Device India Limited |
| 8407 |
2N5781 |
Silicon P-N-P epitaxial-base transistor. -80V, 10W. |
General Electric Solid State |
| 8408 |
2N5782 |
Silicon P-N-P epitaxial-base transistor. -65V, 10W. |
General Electric Solid State |
| 8409 |
2N5783 |
Silicon P-N-P epitaxial-base transistor. -45V, 10W. |
General Electric Solid State |
| 8410 |
2N5784 |
Silicon N-P-N epitaxial-base transistor. 80V, 10W. |
General Electric Solid State |
| 8411 |
2N5785 |
Silicon N-P-N epitaxial-base transistor. 65V, 10W. |
General Electric Solid State |
| 8412 |
2N5786 |
Silicon N-P-N epitaxial-base transistor. 45V, 10W. |
General Electric Solid State |
| 8413 |
2N5838 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
| 8414 |
2N5839 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
| 8415 |
2N5840 |
High-voltage, high-power silicon N-P-N power transistor. |
General Electric Solid State |
| 8416 |
2N5875 |
POWER TRANSISTORS(10A,150W) |
MOSPEC Semiconductor |
| 8417 |
2N5876 |
POWER TRANSISTORS(10A,150W) |
MOSPEC Semiconductor |
| 8418 |
2N5877 |
POWER TRANSISTORS(10A,150W) |
MOSPEC Semiconductor |
| 8419 |
2N5878 |
POWER TRANSISTORS(10A,150W) |
MOSPEC Semiconductor |
| 8420 |
2N5879 |
POWER TRANSISTORS(15A,160W) |
MOSPEC Semiconductor |
| 8421 |
2N5880 |
POWER TRANSISTORS(15A,160W) |
MOSPEC Semiconductor |
| 8422 |
2N5881 |
POWER TRANSISTORS(15A,160W) |
MOSPEC Semiconductor |
| 8423 |
2N5882 |
POWER TRANSISTORS(15A,160W) |
MOSPEC Semiconductor |
| 8424 |
2N5883 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
| 8425 |
2N5884 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
| 8426 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 8427 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 8428 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 8429 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
| 8430 |
2N5885 |
POWER TRANSISTORS(25A,200W) |
MOSPEC Semiconductor |
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