No. |
Part Name |
Description |
Manufacturer |
8521 |
2N6055 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
8522 |
2N6055 |
POWER TRANSISTORS(8A,100W) |
MOSPEC Semiconductor |
8523 |
2N6055 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
8524 |
2N6056 |
8 A silicon N-P-N darlington power transistor. |
General Electric Solid State |
8525 |
2N6056 |
POWER TRANSISTORS(8A,100W) |
MOSPEC Semiconductor |
8526 |
2N6056 |
Silicon epitaxial-base NPN power transistors in monolithic Darlington configuration |
SGS-ATES |
8527 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
8528 |
2N6057 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
8529 |
2N6057 |
POWER TRANSISTORS(12A,150W) |
MOSPEC Semiconductor |
8530 |
2N6057 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
8531 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
8532 |
2N6058 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
8533 |
2N6058 |
POWER TRANSISTORS(12A,150W) |
MOSPEC Semiconductor |
8534 |
2N6058 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
8535 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
8536 |
2N6059 |
12A N-P-N monolithic darlington power transistor. |
General Electric Solid State |
8537 |
2N6059 |
POWER TRANSISTORS(12A,150W) |
MOSPEC Semiconductor |
8538 |
2N6059 |
Silicon epitaxial-base NPN power transistor in monolithic Darlington configuration |
SGS-ATES |
8539 |
2N6076 |
PNP silicon transistor. 25V, 100mA. |
General Electric Solid State |
8540 |
2N6077 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
8541 |
2N6078 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
8542 |
2N6079 |
High-voltage, high-power silicon N-P-N transistor. |
General Electric Solid State |
8543 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
8544 |
2N6106 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
8545 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
8546 |
2N6107 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
8547 |
2N6107 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
8548 |
2N6107 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
8549 |
2N6107 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
8550 |
2N6107 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
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