No. |
Part Name |
Description |
Manufacturer |
8581 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
8582 |
2N6123 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
8583 |
2N6123 |
4A complementary silicon plastic 40W power NPN transistor |
Motorola |
8584 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
8585 |
2N6124 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -45V. |
General Electric Solid State |
8586 |
2N6124 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
8587 |
2N6124 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
8588 |
2N6124 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
8589 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
8590 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
8591 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
8592 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
8593 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
8594 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
8595 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
8596 |
2N6126 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
8597 |
2N6126 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
8598 |
2N6126 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
8599 |
2N6211 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
8600 |
2N6211 |
POWER TRANSISTORS(2A, 35W) |
MOSPEC Semiconductor |
8601 |
2N6212 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
8602 |
2N6212 |
POWER TRANSISTORS(2A, 35W) |
MOSPEC Semiconductor |
8603 |
2N6213 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
8604 |
2N6213 |
POWER TRANSISTORS(2A, 35W) |
MOSPEC Semiconductor |
8605 |
2N6214 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
8606 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
8607 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
8608 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
8609 |
2N6249 |
300V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
8610 |
2N6250 |
375V, 30A, 175W silicon N-P-N switcing transistor. |
General Electric Solid State |
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