No. |
Part Name |
Description |
Manufacturer |
8461 |
2N5945 |
450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
8462 |
2N5946 |
450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications |
SGS Thomson Microelectronics |
8463 |
2N5954 |
Silicon P-N-P medium-power transistor. -90V, 40W. |
General Electric Solid State |
8464 |
2N5955 |
Silicon P-N-P medium-power transistor. -70V, 40W. |
General Electric Solid State |
8465 |
2N5956 |
Silicon P-N-P medium-power transistor. -50V, 40W. |
General Electric Solid State |
8466 |
2N6027 |
Programmable unijunction transistor. |
General Electric Solid State |
8467 |
2N6028 |
Programmable unijunction transistor. |
General Electric Solid State |
8468 |
2N6032 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
8469 |
2N6032 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
8470 |
2N6033 |
High-current, high-power, high-speed silicon N-P-N transistor. |
General Electric Solid State |
8471 |
2N6033 |
Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case |
SGS-ATES |
8472 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
8473 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
8474 |
2N6035 |
Plastic Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
8475 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
8476 |
2N6035-D |
Plastic Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
8477 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
8478 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
8479 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
8480 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
8481 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
8482 |
2N6038 |
Plastic Darlington Complementary Silicon Power Transistors |
ON Semiconductor |
8483 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
8484 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
8485 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
8486 |
2N6040 |
POWER TRANSISTORS(10A,80W) |
MOSPEC Semiconductor |
8487 |
2N6040 |
Darlington 8A plastic complementary medium-power PNP 75W transistor |
Motorola |
8488 |
2N6040-D |
Plastic Medium-Power Complementary Silicon Transistors |
ON Semiconductor |
8489 |
2N6041 |
POWER TRANSISTORS(10A,80W) |
MOSPEC Semiconductor |
8490 |
2N6041 |
Darlington 8A plastic complementary medium-power PNP 75W transistor |
Motorola |
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