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Datasheets for C

Datasheets found :: 371126
Page: | 279 | 280 | 281 | 282 | 283 | 284 | 285 | 286 | 287 |
No. Part Name Description Manufacturer
8461 2N5945 450-512MHz CLASS C 12.5V 4W NPN RF transistor for mobile applications SGS Thomson Microelectronics
8462 2N5946 450-512MHz CLASS C 12.5V 10W NPN RF transistor for mobile applications SGS Thomson Microelectronics
8463 2N5954 Silicon P-N-P medium-power transistor. -90V, 40W. General Electric Solid State
8464 2N5955 Silicon P-N-P medium-power transistor. -70V, 40W. General Electric Solid State
8465 2N5956 Silicon P-N-P medium-power transistor. -50V, 40W. General Electric Solid State
8466 2N6027 Programmable unijunction transistor. General Electric Solid State
8467 2N6028 Programmable unijunction transistor. General Electric Solid State
8468 2N6032 High-current, high-power, high-speed silicon N-P-N transistor. General Electric Solid State
8469 2N6032 Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case SGS-ATES
8470 2N6033 High-current, high-power, high-speed silicon N-P-N transistor. General Electric Solid State
8471 2N6033 Silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case SGS-ATES
8472 2N6034 W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. Continental Device India Limited
8473 2N6034 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
8474 2N6035 Plastic Darlington Complementary Silicon Power Transistors ON Semiconductor
8475 2N6035 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
8476 2N6035-D Plastic Darlington Complementary Silicon Power Transistors ON Semiconductor
8477 2N6036 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. Continental Device India Limited
8478 2N6036 Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration SGS-ATES
8479 2N6037 40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
8480 2N6037 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
8481 2N6038 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. Continental Device India Limited
8482 2N6038 Plastic Darlington Complementary Silicon Power Transistors ON Semiconductor
8483 2N6038 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
8484 2N6039 W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. Continental Device India Limited
8485 2N6039 Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration SGS-ATES
8486 2N6040 POWER TRANSISTORS(10A,80W) MOSPEC Semiconductor
8487 2N6040 Darlington 8A plastic complementary medium-power PNP 75W transistor Motorola
8488 2N6040-D Plastic Medium-Power Complementary Silicon Transistors ON Semiconductor
8489 2N6041 POWER TRANSISTORS(10A,80W) MOSPEC Semiconductor
8490 2N6041 Darlington 8A plastic complementary medium-power PNP 75W transistor Motorola


Datasheets found :: 371126
Page: | 279 | 280 | 281 | 282 | 283 | 284 | 285 | 286 | 287 |



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