| No. |
Part Name |
Description |
Manufacturer |
| 8371 |
2N5546JAN |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 8372 |
2N5546JANTX |
Monolithic N-Channel JFET Duals |
Vishay |
| 8373 |
2N5546JANTXV |
Monolithic N-Channel JFET Duals |
Vishay |
| 8374 |
2N5546TX |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 8375 |
2N5546TXV |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 8376 |
2N5547JAN |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 8377 |
2N5547JANTX |
Monolithic N-Channel JFET Duals |
Vishay |
| 8378 |
2N5547JANTXV |
Monolithic N-Channel JFET Duals |
Vishay |
| 8379 |
2N5547TX |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 8380 |
2N5547TXV |
Monolithic MilitaryGeneral Purpose |
Vishay |
| 8381 |
2N5550 |
0.500W General Purpose NPN Plastic Leaded Transistor. 140V Vceo, 0.600A Ic, 60 - hFE |
Continental Device India Limited |
| 8382 |
2N5551 |
0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFE |
Continental Device India Limited |
| 8383 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
| 8384 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 8385 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
| 8386 |
2N5635 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 8387 |
2N5636 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 8388 |
2N5637 |
WIDEBAND VHF-UHF Class C NPN epitaxial planar silicon Transistor |
SGS Thomson Microelectronics |
| 8389 |
2N5643 |
NPN RF transistor 28V Class C 40W |
SGS Thomson Microelectronics |
| 8390 |
2N5655 |
Plastic NPN Silicon High-Voltage Power Transistor |
ON Semiconductor |
| 8391 |
2N5655-D |
Plastic NPN Silicon High-Voltage Power Transistor |
ON Semiconductor |
| 8392 |
2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS |
SemeLAB |
| 8393 |
2N5671 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 8394 |
2N5671 |
POWER TRANSISTORS(30A,140W) |
MOSPEC Semiconductor |
| 8395 |
2N5672 |
High-current, high-power, high-speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 8396 |
2N5672 |
POWER TRANSISTORS(30A,140W) |
MOSPEC Semiconductor |
| 8397 |
2N5683 |
POWER TRANSISTORS(50A,300W) |
MOSPEC Semiconductor |
| 8398 |
2N5684 |
POWER TRANSISTORS(50A,300W) |
MOSPEC Semiconductor |
| 8399 |
2N5685 |
POWER TRANSISTORS(50A,300W) |
MOSPEC Semiconductor |
| 8400 |
2N5686 |
POWER TRANSISTORS(50A,300W) |
MOSPEC Semiconductor |
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