| No. |
Part Name |
Description |
Manufacturer |
| 8251 |
2N5016 |
Wideband VHF-UHF Class C NPN transistor 15W 28V |
SGS Thomson Microelectronics |
| 8252 |
2N5038 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 8253 |
2N5038 |
POWER TRANSISTORS(20A,140W) |
MOSPEC Semiconductor |
| 8254 |
2N5039 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
| 8255 |
2N5039 |
POWER TRANSISTORS(20A,140W) |
MOSPEC Semiconductor |
| 8256 |
2N5060 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 8257 |
2N5061 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 8258 |
2N5062 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 8259 |
2N5063 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 8260 |
2N5064 |
PNPN plastic thyristors (silicon controlled rectifier) |
Motorola |
| 8261 |
2N5067 |
POWER TRANSISTORS(5.0A,87.5W) |
MOSPEC Semiconductor |
| 8262 |
2N5068 |
POWER TRANSISTORS(5.0A,87.5W) |
MOSPEC Semiconductor |
| 8263 |
2N5069 |
POWER TRANSISTORS(5.0A,87.5W) |
MOSPEC Semiconductor |
| 8264 |
2N5086 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 150 - hFE |
Continental Device India Limited |
| 8265 |
2N5087 |
0.625W General Purpose PNP Plastic Leaded Transistor. 50V Vceo, 0.050A Ic, 250 - hFE |
Continental Device India Limited |
| 8266 |
2N5088 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.050A Ic, 300 - 900 hFE |
Continental Device India Limited |
| 8267 |
2N5089 |
0.625W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.050A Ic, 400 - 1200 hFE |
Continental Device India Limited |
| 8268 |
2N5090 |
Wideband VHF-UHF Class C NPN transistor 1.2W 28V |
SGS Thomson Microelectronics |
| 8269 |
2N5172 |
0.400W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.150A Ic, 100 - 500 hFE |
Continental Device India Limited |
| 8270 |
2N5172 |
NPN silicon transistor. 25V, 100mA. |
General Electric Solid State |
| 8271 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 8272 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 8273 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 8274 |
2N5193 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 8275 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 8276 |
2N5194 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 8277 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 8278 |
2N5195 |
Silicon epitaxial-base PNP medium power transistor in Jedec TO-126 plastic package |
SGS-ATES |
| 8279 |
2N5196 |
Monolithic General Purpose |
Vishay |
| 8280 |
2N5197 |
Monolithic General Purpose |
Vishay |
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