No. |
Part Name |
Description |
Manufacturer |
8161 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
8162 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
8163 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
8164 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
8165 |
2N4231A |
POWER TRANSISTORS(5A,75W) |
MOSPEC Semiconductor |
8166 |
2N4232A |
POWER TRANSISTORS(5A,75W) |
MOSPEC Semiconductor |
8167 |
2N4233A |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
8168 |
2N4240 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
8169 |
2N4240 |
POWER TRANSISTORS(35W) |
MOSPEC Semiconductor |
8170 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
8171 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
8172 |
2N4276 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
8173 |
2N4314 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
8174 |
2N4347 |
High voltage silicon N-P-N transistor. 140V, 100W. |
General Electric Solid State |
8175 |
2N4347 |
POWER TRANSISTORS |
MOSPEC Semiconductor |
8176 |
2N4347 |
High voltage hometaxial NPN transistor in Jedec TO-3 metal case |
SGS-ATES |
8177 |
2N4348 |
HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS |
General Electric Solid State |
8178 |
2N4392CSM |
SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
8179 |
2N4393CSM |
SMALL SIGNAL N.CHANNEL J.FET IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
8180 |
2N4398 |
POWER TRANSISTORS(200W) |
MOSPEC Semiconductor |
8181 |
2N4399 |
POWER TRANSISTORS(200W) |
MOSPEC Semiconductor |
8182 |
2N4400 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
8183 |
2N4400 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
8184 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
8185 |
2N4401 |
0.625W Switching NPN Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 40 hFE. |
Continental Device India Limited |
8186 |
2N4401 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
8187 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
8188 |
2N4402 |
0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
8189 |
2N4402 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
8190 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
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