| No. |
Part Name |
Description |
Manufacturer |
| 8101 |
2N3872 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
| 8102 |
2N3873 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
| 8103 |
2N3878 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 8104 |
2N3879 |
High speed, epitaxial collector silicon N-P-N planar transistor. |
General Electric Solid State |
| 8105 |
2N3896 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
| 8106 |
2N3897 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
| 8107 |
2N3898 |
35A silicon controlled rectifier. Vrsom(non-rep) 660V. |
General Electric Solid State |
| 8108 |
2N3899 |
35A silicon controlled rectifier. Vrsom(non-rep) 700V. |
General Electric Solid State |
| 8109 |
2N3903 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE |
Continental Device India Limited |
| 8110 |
2N3903 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8111 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
| 8112 |
2N3904 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 40 - hFE |
Continental Device India Limited |
| 8113 |
2N3904 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8114 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
| 8115 |
2N3904CSM |
GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 8116 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
| 8117 |
2N3905 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8118 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 8119 |
2N3906 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE |
Continental Device India Limited |
| 8120 |
2N3906 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8121 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 8122 |
2N3921 |
MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER |
Calogic |
| 8123 |
2N3921 |
Monolithic Dual N-Channel JFET General Purpose Amplifier |
Intersil |
| 8124 |
2N3921 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
| 8125 |
2N3922 |
MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER |
Calogic |
| 8126 |
2N3922 |
Monolithic Dual N-Channel JFET General Purpose Amplifier |
Intersil |
| 8127 |
2N3922 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
| 8128 |
2N3954 |
Monolithic Dual N-Channel JFET General Purpose Amplifier |
Intersil |
| 8129 |
2N3954 |
Low Noise, Low Drift, Monolithic Dual, N-Channel JFET |
Linear Systems |
| 8130 |
2N3954 |
N-Channel Monolithic Dual JFET |
National Semiconductor |
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