| No. |
Part Name |
Description |
Manufacturer |
| 8071 |
2N3773 |
High voltage, high power transistor. 160V, 150W. |
General Electric Solid State |
| 8072 |
2N3773 |
POWER TRANSISTORS(16A,140V,150W) |
MOSPEC Semiconductor |
| 8073 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 8074 |
2N3773 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 8075 |
2N3773 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 8076 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 8077 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 8078 |
2N3789 |
POWER TRANSISTORS(10A,150W) |
MOSPEC Semiconductor |
| 8079 |
2N3790 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 8080 |
2N3791 |
Silicon P-N-P epitaxial-base high power transistor. -60V, 150W. |
General Electric Solid State |
| 8081 |
2N3791 |
POWER TRANSISTORS: GENERAL PURPOSE AMPLIFIER AND LOW-FREQUENCY SWITCHING APPLICATION |
MOSPEC Semiconductor |
| 8082 |
2N3792 |
Silicon P-N-P epitaxial-base high power transistor. -80V, 150W. |
General Electric Solid State |
| 8083 |
2N3792 |
POWER TRANSISTORS(10A,150W) |
MOSPEC Semiconductor |
| 8084 |
2N3810 |
Monolithic Dual Matched PNP General Purpose Amplifier |
Intersil |
| 8085 |
2N3810A |
Monolithic Dual Matched PNP General Purpose Amplifier |
Intersil |
| 8086 |
2N3810DCSM |
DUAL HIGH GAIN PNP TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 8087 |
2N3811 |
Monolithic Dual Matched PNP General Purpose Amplifier |
Intersil |
| 8088 |
2N3811A |
Monolithic Dual Matched PNP General Purpose Amplifier |
Intersil |
| 8089 |
2N3858 |
SILICON TRANSISTORS |
General Electric Solid State |
| 8090 |
2N3858-60 |
SILICON TRANSISTORS |
General Electric Solid State |
| 8091 |
2N3858A |
SILICON TRANSISTORS |
General Electric Solid State |
| 8092 |
2N3859 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
| 8093 |
2N3859A |
Planar epitaxial passivated NPN silicon transistor. 60V, 100mA. |
General Electric Solid State |
| 8094 |
2N3860 |
Planar epitaxial passivated NPN silicon transistor. 30V, 100mA. |
General Electric Solid State |
| 8095 |
2N3862 |
Silicon Planar Epitaxial Logic NPN Transistor |
Transitron Electronic |
| 8096 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 8097 |
2N3867 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
| 8098 |
2N3868 |
Silicon epitaxial planar PNP transistor in Jedec TO-39 metal case |
SGS-ATES |
| 8099 |
2N3870 |
35A silicon controlled rectifier. Vrsom(non-rep) 150V. |
General Electric Solid State |
| 8100 |
2N3871 |
35A silicon controlled rectifier. Vrsom(non-rep) 330V. |
General Electric Solid State |
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