| No. |
Part Name |
Description |
Manufacturer |
| 8191 |
2N4403 |
0.625W Switching PNP Plastic Leaded Transistor. 40V Vceo, 0.600A Ic, 20 hFE. |
Continental Device India Limited |
| 8192 |
2N4403 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 8193 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 8194 |
2N4409 |
0.625W General Purpose NPN Plastic Leaded Transistor. 50V Vceo, 0.250A Ic, 60 - 400 hFE |
Continental Device India Limited |
| 8195 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
| 8196 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 8197 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 8198 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 8199 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 8200 |
2N4429 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 8201 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 8202 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 8203 |
2N4440 |
Wideband VHF-UHF class C NPN transistor |
SGS Thomson Microelectronics |
| 8204 |
2N4441 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 8205 |
2N4442 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 8206 |
2N4443 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 8207 |
2N4444 |
Plastic thyristors (silicon controlled rectifiers) designed for high-volume consumer phase-control applications |
Motorola |
| 8208 |
2N4870 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
| 8209 |
2N4871 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
| 8210 |
2N4878 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 8211 |
2N4879 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 8212 |
2N4880 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 8213 |
2N4898 |
Silicon P-N-P medium power transistor. 40V, 25W. |
General Electric Solid State |
| 8214 |
2N4898 |
POWER TRANSISTORS(1A, 25W) |
MOSPEC Semiconductor |
| 8215 |
2N4899 |
Silicon P-N-P medium power transistor. 60V, 25W. |
General Electric Solid State |
| 8216 |
2N4899 |
POWER TRANSISTORS(1A, 25W) |
MOSPEC Semiconductor |
| 8217 |
2N4900 |
Silicon P-N-P medium power transistor. 80V, 25W. |
General Electric Solid State |
| 8218 |
2N4900 |
POWER TRANSISTORS(1A, 25W) |
MOSPEC Semiconductor |
| 8219 |
2N4901 |
POWER TRANSISTORS(5.0A,87.5W) |
MOSPEC Semiconductor |
| 8220 |
2N4902 |
POWER TRANSISTORS(5.0A,87.5W) |
MOSPEC Semiconductor |
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