No. |
Part Name |
Description |
Manufacturer |
8311 |
2N5303 |
High current, high power, high speed N-P-N power transistor. 80V, 200W. |
General Electric Solid State |
8312 |
2N5303 |
POWER TRANSISTORS(200W) |
MOSPEC Semiconductor |
8313 |
2N5305 |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
8314 |
2N5306 |
Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. |
General Electric Solid State |
8315 |
2N5306A |
SILICON DARLINGTON TRANSISTORS |
General Electric Solid State |
8316 |
2N5307 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
8317 |
2N5308 |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
8318 |
2N5308A |
Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. |
General Electric Solid State |
8319 |
2N5320 |
General purpose N-P-N silicon power transistor. |
General Electric Solid State |
8320 |
2N5321 |
General purpose N-P-N silicon power transistor. |
General Electric Solid State |
8321 |
2N5322 |
General purpose P-N-P silicon power transistor. |
General Electric Solid State |
8322 |
2N5323 |
General purpose P-N-P silicon power transistor. |
General Electric Solid State |
8323 |
2N5365 |
SILICON TRANSISTORS |
General Electric Solid State |
8324 |
2N5366 |
Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. |
General Electric Solid State |
8325 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
8326 |
2N5401 |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
8327 |
2N5401AI |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
8328 |
2N5401SAM |
0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE |
Continental Device India Limited |
8329 |
2N5415 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
8330 |
2N5415CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
8331 |
2N5416 |
High-voltage silicon P-N-P planar transistor. |
General Electric Solid State |
8332 |
2N5416CSM4 |
PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
8333 |
2N5427 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
8334 |
2N5428 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
8335 |
2N5429 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
8336 |
2N5430 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
8337 |
2N5441 |
40-A Silicon Triacs |
General Electric Solid State |
8338 |
2N5442 |
40-A Silicon Triacs |
General Electric Solid State |
8339 |
2N5443 |
40-A Silicon Triacs |
General Electric Solid State |
8340 |
2N5444 |
40-A Silicon Triacs |
General Electric Solid State |
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