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Datasheets for C

Datasheets found :: 371126
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No. Part Name Description Manufacturer
8311 2N5303 High current, high power, high speed N-P-N power transistor. 80V, 200W. General Electric Solid State
8312 2N5303 POWER TRANSISTORS(200W) MOSPEC Semiconductor
8313 2N5305 SILICON DARLINGTON TRANSISTORS General Electric Solid State
8314 2N5306 Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. General Electric Solid State
8315 2N5306A SILICON DARLINGTON TRANSISTORS General Electric Solid State
8316 2N5307 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
8317 2N5308 Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
8318 2N5308A Planar epitaxial passivated NPN silicon Darlington transistor. 40V, 300mA. General Electric Solid State
8319 2N5320 General purpose N-P-N silicon power transistor. General Electric Solid State
8320 2N5321 General purpose N-P-N silicon power transistor. General Electric Solid State
8321 2N5322 General purpose P-N-P silicon power transistor. General Electric Solid State
8322 2N5323 General purpose P-N-P silicon power transistor. General Electric Solid State
8323 2N5365 SILICON TRANSISTORS General Electric Solid State
8324 2N5366 Planar epitaxial passivated PNP silicon transistor. 40V, 300mA. General Electric Solid State
8325 2N5400 0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE Continental Device India Limited
8326 2N5401 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
8327 2N5401AI 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
8328 2N5401SAM 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE Continental Device India Limited
8329 2N5415 High-voltage silicon P-N-P planar transistor. General Electric Solid State
8330 2N5415CSM4 PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
8331 2N5416 High-voltage silicon P-N-P planar transistor. General Electric Solid State
8332 2N5416CSM4 PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
8333 2N5427 POWER TRANSISTORS(7A,40W) MOSPEC Semiconductor
8334 2N5428 POWER TRANSISTORS(7A,40W) MOSPEC Semiconductor
8335 2N5429 POWER TRANSISTORS(7A,40W) MOSPEC Semiconductor
8336 2N5430 POWER TRANSISTORS(7A,40W) MOSPEC Semiconductor
8337 2N5441 40-A Silicon Triacs General Electric Solid State
8338 2N5442 40-A Silicon Triacs General Electric Solid State
8339 2N5443 40-A Silicon Triacs General Electric Solid State
8340 2N5444 40-A Silicon Triacs General Electric Solid State


Datasheets found :: 371126
Page: | 274 | 275 | 276 | 277 | 278 | 279 | 280 | 281 | 282 |



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