No. |
Part Name |
Description |
Manufacturer |
901 |
2N2222A |
Silicon NPN epitaxial planar transistor for high speed switchings and RF amplifier circuits |
AEG-TELEFUNKEN |
902 |
2N2222A |
NPN silicon annular Star transistor for high-speed and switching and DC to VHF amplifier applications |
Motorola |
903 |
2N2222A |
Transistor, high speed saturated switches |
SGS-ATES |
904 |
2N2222A |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
905 |
2N2222ACSM |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
906 |
2N2222ACSM4 |
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
907 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
908 |
2N2222ADCSM |
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
909 |
2N2222AXCSM |
Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications |
SemeLAB |
910 |
2N2222B |
NPN Transistor Medium Power, low noise, high breakdown voltage, low saturation voltage |
Amelco Semiconductor |
911 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
912 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
913 |
2N2273 |
High-frequency germanium PNP transistor, designed for mlitary and high-reliability industrial as well as comercial VHF amplifier applications |
Motorola |
914 |
2N2297 |
NPN Transistor Medium Power, high collector current |
Amelco Semiconductor |
915 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
916 |
2N2297 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
917 |
2N2330 |
SEPT® NPN epitaxial planar silicon high-speed transistor for choppers |
Sprague |
918 |
2N2331 |
SEPT® NPN epitaxial planar silicon high-speed transistor for choppers |
Sprague |
919 |
2N2357 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
920 |
2N2358 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
921 |
2N2359 |
PNP Germanium power transistor, very high-current, low saturation voltage, fast switching times |
Motorola |
922 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
923 |
2N2368 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
924 |
2N2368 |
Transistor, high speed saturated switches |
SGS-ATES |
925 |
2N2369 |
NPN high speed saturated switch. |
Fairchild Semiconductor |
926 |
2N2369 |
NPN silicon annular transistor for low-current, high-speed switching applications |
Motorola |
927 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
928 |
2N2369 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
929 |
2N2369 |
Transistor, high speed saturated switches |
SGS-ATES |
930 |
2N2369A |
NPN high speed saturated switch. |
Fairchild Semiconductor |
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