No. |
Part Name |
Description |
Manufacturer |
961 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
962 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
963 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
964 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
965 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
966 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
967 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
968 |
2N2586 |
NPN Transistor General Purpose, low noise, high current gain, low leakage |
Amelco Semiconductor |
969 |
2N2604 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
970 |
2N2605 |
PNP silicon annular transistor, low level, low noise, high gain |
Motorola |
971 |
2N2635 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
972 |
2N2708 |
NPN transistor RF/IF Amplifier, high power gain, low capacitance |
Amelco Semiconductor |
973 |
2N2710 |
NPN small signal high speed low power saturated switch transistor. |
Fairchild Semiconductor |
974 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
975 |
2N2787 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
976 |
2N2788 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
977 |
2N2789 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
978 |
2N2790 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
979 |
2N2791 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
980 |
2N2792 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
981 |
2N2795 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
982 |
2N2796 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
983 |
2N2797 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
984 |
2N2798 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
985 |
2N2799 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
986 |
2N2845 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
987 |
2N2846 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
988 |
2N2847 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
989 |
2N2848 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
990 |
2N2857CSM |
HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
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