No. |
Part Name |
Description |
Manufacturer |
1051 |
2N2962 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
1052 |
2N2963 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
1053 |
2N2964 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
1054 |
2N2965 |
ECDC® PNP VHF high power germanium transistor |
Sprague |
1055 |
2N2972 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
1056 |
2N2973 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
1057 |
2N2974 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
1058 |
2N2975 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
1059 |
2N2976 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
1060 |
2N2977 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
1061 |
2N2978 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
1062 |
2N2979 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
1063 |
2N3009 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
1064 |
2N3009 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
1065 |
2N3010 |
NPN High Current General Purpose Medium Speed Amplifiers |
Semicoa Semiconductor |
1066 |
2N3012 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
1067 |
2N3013 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
1068 |
2N3013 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
1069 |
2N3014 |
NPN SILICON HIGH SPEED SWITCHING TRANSISTORS |
Central Semiconductor |
1070 |
2N3015 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
1071 |
2N3019 |
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS |
SGS Thomson Microelectronics |
1072 |
2N3019CSM |
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
1073 |
2N3053 |
NPN Silicon Transistor for high level audio applications |
Newmarket Transistors NKT |
1074 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
1075 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
1076 |
2N3055 |
Silicon n-p-n high power transistor |
Mullard |
1077 |
2N3055-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
1078 |
2N3055A |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
1079 |
2N3055A-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
1080 |
2N3055U |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| | | |