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Datasheets for HIG

Datasheets found :: 101198
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No. Part Name Description Manufacturer
1081 2N3055U Silicon HOMETAXIAL NPN transistor, high current, high power amplifier SGS-ATES
1082 2N3055V Silicon HOMETAXIAL NPN transistor, high current, high power amplifier SGS-ATES
1083 2N3055V Silicon HOMETAXIAL NPN transistor, high current, high power amplifier SGS-ATES
1084 2N3073 Silicon transistor, high speed saturated switches SGS-ATES
1085 2N3114 NPN silicon transistor designed for high-voltage, low power video amplifier applications Motorola
1086 2N3114CSM Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications SemeLAB
1087 2N3115 SEPT® NPN planar epitaxial high-speed transistor Sprague
1088 2N3116 SEPT® NPN planar epitaxial high-speed transistor Sprague
1089 2N3121 Silicon transistor, high speed saturated switches SGS-ATES
1090 2N3209 Silicon transistor, high speed saturated switches SGS-ATES
1091 2N3209CSM HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS SemeLAB
1092 2N3209DCSM DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE SemeLAB
1093 2N3210 NPN silicon high frequency switching transistor for industrial service Motorola
1094 2N3211 NPN silicon high frequency switching transistor for industrial service Motorola
1095 2N3227 NPN silicon annular transistor for low-current, high-speed switching applications Motorola
1096 2N3251 Silicon transistor, high speed saturated switches SGS-ATES
1097 2N3252 NPN silicon transistor for high-current saturated switching and core driver applications Motorola
1098 2N3252 Silicon transistor, high speed saturated switches SGS-ATES
1099 2N3253 NPN silicon transistor for high-current saturated switching and core driver applications Motorola
1100 2N3253 Silicon transistor, high speed saturated switches SGS-ATES
1101 2N3253 Silicon Planar High Current core drivers - PNP Transistor Transitron Electronic
1102 2N3262 Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers RCA Solid State
1103 2N3262 Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers RCA Solid State
1104 2N3279 PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier Motorola
1105 2N3280 PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier Motorola
1106 2N3281 PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier Motorola
1107 2N3282 PNP germanium epitaxial mesa transistor for high gain, low-noise amplifier, oscillator, mixer and frequency multiplier Motorola
1108 2N3299 Silicon transistor, high speed saturated switches SGS-ATES
1109 2N3300 Silicon transistor, high speed saturated switches SGS-ATES
1110 2N3301 Silicon transistor, high speed saturated switches SGS-ATES


Datasheets found :: 101198
Page: | 33 | 34 | 35 | 36 | 37 | 38 | 39 | 40 | 41 |



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