| No. |
Part Name |
Description |
Manufacturer |
| 1111 |
2N3302 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 1112 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 1113 |
2N3303 |
NPN silicon annular transistor designet for high-speed, high-current switching and driving applications |
Motorola |
| 1114 |
2N3303 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 1115 |
2N3320 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1116 |
2N3321 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1117 |
2N3322 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1118 |
2N3375 |
Silicon NPN epitaxial high frequency power transistor for VHF and UHF power stages, oscillators and driver stages |
AEG-TELEFUNKEN |
| 1119 |
2N3375 |
NPN Silicon High-Frequency Transistor |
Siemens |
| 1120 |
2N3423 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 1121 |
2N3424 |
Dual NPN silicon transistor designed for use as sens and high-frequency differential amplifiers |
Motorola |
| 1122 |
2N3425 |
Dual NPN silicon transistor designed for use as a high-frequency sense amplifier |
Motorola |
| 1123 |
2N3426 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 1124 |
2N3439 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 1125 |
2N3439 |
Silicon NPN High Voltage Transistor |
IPRS Baneasa |
| 1126 |
2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1127 |
2N3439CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1128 |
2N3440 |
1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE. |
Continental Device India Limited |
| 1129 |
2N3440 |
NPN switching transistor - metal case, high power |
IPRS Baneasa |
| 1130 |
2N3440 |
Silicon NPN High Voltage Transistor |
IPRS Baneasa |
| 1131 |
2N3440CSM4R |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1132 |
2N3440S |
Silicon planar epitaxial NPN transistor intended for high voltage switching and linear amplifier applications |
SGS-ATES |
| 1133 |
2N3442 |
Silicon n-p-n high power transistor |
Mullard |
| 1134 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 1135 |
2N3442 |
Silicon HOMETAXIAL NPN transistor, high power, high voltage switch |
SGS-ATES |
| 1136 |
2N3444 |
NPN silicon transistor for high-current saturated switching and core driver applications |
Motorola |
| 1137 |
2N3444 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 1138 |
2N3485 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1139 |
2N3485A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1140 |
2N3486 |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
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