| No. |
Part Name |
Description |
Manufacturer |
| 1021 |
2N2907 |
PNP Silicon annular star transistor for high-speed switching and DC to UHF amplifier applications, 2N2222 NPN complementary |
Motorola |
| 1022 |
2N2907 |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 1023 |
2N2907A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 1024 |
2N2907A |
PNP silicon annular Star transistor for high-speed switching, complementary circuitry and DC to VHF amplifier applications |
Motorola |
| 1025 |
2N2907A |
Silicon transistor, high speed saturated switches |
SGS-ATES |
| 1026 |
2N2907ACSM |
HIGH SPEED, MEDIUM POWER, PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1027 |
2N2907ADCSM |
DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1028 |
2N2907ADCSM |
DUAL HIGH SPEED, MEDIUM POWER PNP SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1029 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 1030 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 1031 |
2N2913 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1032 |
2N2914 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1033 |
2N2915 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1034 |
2N2916 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1035 |
2N2916DCSM |
DUAL NPN PLANAR TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1036 |
2N2917 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1037 |
2N2918 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1038 |
2N2919 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1039 |
2N2920 |
Dual NPN silicon annular transistors designed for differential-amplifier, very high Beta guaranteed |
Motorola |
| 1040 |
2N2920DCSM |
DUAL NPN TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 1041 |
2N2942 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1042 |
2N2943 |
ECDC® and MADT® PNP germanium transistor High speed switches |
Sprague |
| 1043 |
2N2944 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 1044 |
2N2945 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 1045 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
| 1046 |
2N2955 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1047 |
2N2956 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1048 |
2N2957 |
PNP germanium epitaxial mesa transistor for high-speed switching applications |
Motorola |
| 1049 |
2N2958 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
| 1050 |
2N2959 |
SEPT® NPN planar epitaxial high-speed transistor |
Sprague |
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