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Datasheets for -EM

Datasheets found :: 949
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No. Part Name Description Manufacturer
91 ADM213E EMI-EMC-Compliant, 15 kV ESD Protected, RS-232 Line Drivers/Receivers Analog Devices
92 AN-555 Application Note - Mounting stripline-opposed-emiter (SOE) transistors Motorola
93 BC107A NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 SGS Thomson Microelectronics
94 BC107B NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
95 BC108A NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 SGS Thomson Microelectronics
96 BC108B NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
97 BC108C NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 SGS Thomson Microelectronics
98 BC109B NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 SGS Thomson Microelectronics
99 BC109C NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 SGS Thomson Microelectronics
100 BC237 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
101 BC238 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
102 BC239 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. USHA India LTD
103 BC307 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
104 BC308 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
105 BC309 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. USHA India LTD
106 BC327 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
107 BC327 Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. USHA India LTD
108 BC327-16 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
109 BC327-25 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
110 BC327-40 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
111 BC328 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
112 BC328-16 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
113 BC328-25 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
114 BC328-40 PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
115 BC337 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
116 BC337 Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current USHA India LTD
117 BC337-16 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
118 BC337-25 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
119 BC337-40 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens
120 BC338 NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) Siemens


Datasheets found :: 949
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 |



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