| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5150A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 2 |
1N5151 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 3 |
1N5152 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 4 |
1N5152A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 5 |
1N5153 |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 6 |
1N5153A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 7 |
1N5155A |
Silicon high-frequency step-recovery power varactor device |
Motorola |
| 8 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 9 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 10 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 11 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
| 12 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
| 13 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 14 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
| 15 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 16 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 17 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
| 18 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
| 19 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
| 20 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 21 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 22 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 23 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 24 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
| 25 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
| 26 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 27 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
| 28 |
2N2484 |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| 29 |
2N2484UA |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| 30 |
2N2484UB |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
| | | |
