| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 122 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 123 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 124 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 125 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 126 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 127 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 128 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 129 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 130 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 131 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 132 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 133 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 134 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 135 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 136 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 137 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 138 |
2N5457 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 139 |
2N5458 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 140 |
2N5459 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 141 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 142 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 143 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 144 |
2N6116 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 145 |
2N6117 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 146 |
2N6118 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 147 |
2N6145 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 148 |
2N6146 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 149 |
2N6147 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 150 |
2N6157 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
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