No. |
Part Name |
Description |
Manufacturer |
121 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
122 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
123 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
124 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
125 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
126 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
127 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
128 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
129 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
130 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
131 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
132 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
133 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
134 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
135 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
136 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
137 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
138 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
139 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
140 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
141 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
142 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
143 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
144 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
145 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
146 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
147 |
2N499 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
148 |
2N499A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
149 |
2N502 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
150 |
2N502A |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
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