| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N502B |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
| 152 |
2N5086 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 153 |
2N5087 |
PNP silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 154 |
2N5088 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 155 |
2N5089 |
NPN silicon annular transistor designed for low-level, low-noise amplifier applications |
Motorola |
| 156 |
2N508A |
PNP Germanium Milliwatt transistor designed for low noise audio and switching applications |
Motorola |
| 157 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
| 158 |
2N5324 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 159 |
2N5325 |
PNP germanium power transistor designed for switching, inverter, TV deflection and industrial power supply applications |
Motorola |
| 160 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 161 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 162 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 163 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 164 |
2N5457 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 165 |
2N5458 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 166 |
2N5459 |
Silicon N-channel junction field-effect transistor depletion mode (Type A) |
Motorola |
| 167 |
2N5484 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 168 |
2N5485 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 169 |
2N5486 |
N-channel depletion mode (Type A) junction field-effect transistor designed for VHF/UHF amplfier applications |
Motorola |
| 170 |
2N5591 |
NPN silicon RF power transistor designed for VHF and 13.6V |
Motorola |
| 171 |
2N6081 |
NPN transistor designed for VHF FM mobile and marine transmitters 12.5V 15W |
SGS Thomson Microelectronics |
| 172 |
2N6116 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 173 |
2N6117 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 174 |
2N6118 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 175 |
2N6145 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 176 |
2N6146 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 177 |
2N6147 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 178 |
2N6157 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 179 |
2N6158 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
| 180 |
2N6159 |
SEMICONDUCTOR DEVICE |
New Jersey Semiconductor |
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