| No. |
Part Name |
Description |
Manufacturer |
| 91 |
2N3817 |
Dual PNP silicon transistor designed for differential amplifier applications, TO-89 case |
Motorola |
| 92 |
2N3817A |
Dual PNP silicon transistor designed for differential amplifier applications |
Motorola |
| 93 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 94 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 95 |
2N3823 |
Silicon N-channel junction field-effect transistor designed for VHF amplifier and mixer applications |
Motorola |
| 96 |
2N3824 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
| 97 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 98 |
2N3866 |
Epitaxial planar NPN transistor designed for VHF-UHF class A, B or C amplifier circuits and oscillator applications |
SGS-ATES |
| 99 |
2N3950 |
NPN silicon RF power transistor designed for high-power RF amplifier applications |
Motorola |
| 100 |
2N3980 |
Silicon annular PN unijunction transistor designed for military and industrial use in pulse, timing, sensing, and oscillator circuits |
Motorola |
| 101 |
2N4012 |
NPN silicon transistor designed for frequency-multiplication applications |
Motorola |
| 102 |
2N4048 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 103 |
2N4049 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 104 |
2N4050 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 105 |
2N4051 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 106 |
2N4052 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 107 |
2N4053 |
PNP germanium power transistor designed for high-current applications |
Motorola |
| 108 |
2N4072 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 109 |
2N4073 |
NPN silicon transistor designed as amplifiers and drivers for large-signal VHF and UHF applications |
Motorola |
| 110 |
2N4264 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 111 |
2N4265 |
NPN silicon transistor designed for low-level, saturated logic applications |
Motorola |
| 112 |
2N4416 |
Silicon N-channel junction field-effect transistor designed for VHF/UHF amplifier applications |
Motorola |
| 113 |
2N4427 |
Epitaxial planar NPN transistor designed for VHF class A, B or C amplifier and oscillator applications |
SGS-ATES |
| 114 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 115 |
2N4924 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 116 |
2N4925 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 117 |
2N4926 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 118 |
2N4927 |
NPN silicon annular transistor designed for high-voltage, high-frequency amplifier applications |
Motorola |
| 119 |
2N4948 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
| 120 |
2N4949 |
Silicon annular unijunction transistor designed for military and industrial use |
Motorola |
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