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Datasheets for TOR DE

Datasheets found :: 1290
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
31 2223-3 2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
32 2327-15 2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications SGS Thomson Microelectronics
33 2931-125 High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications SGS Thomson Microelectronics
34 2N1038 PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications Motorola
35 2N1039 PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications Motorola
36 2N1040 PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications Motorola
37 2N1041 PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications Motorola
38 2N1708 NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service Motorola
39 2N1724 NPN silicon power transistor designed for switching and aplifier applications Motorola
40 2N1725 NPN silicon power transistor designed for switching and aplifier applications Motorola
41 2N1742 Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators Motorola
42 2N1893 NPN silicon annular transistor designed for medium-power applications Motorola
43 2N1990 NPN silicon transistor designed for driving neon display tubes Motorola
44 2N2224 NPN silicon annular transistor designed primarly for high speed switching applications Motorola
45 2N2242 NPN silicon annular transistor designed for high-speed, low-power saturated switching applications Motorola
46 2N2322 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
47 2N2323 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
48 2N2324 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
49 2N2325 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
50 2N2326 All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits Motorola
51 2N2405 NPN silicon annular transistor designed for medium-power applications Motorola
52 2N2453 Dual NPN silicon transistor designed for differential amplifier applications Motorola
53 2N2453A Dual NPN silicon transistor designed for differential amplifier applications Motorola
54 2N2484 SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC ST Microelectronics
55 2N2484UA SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC ST Microelectronics
56 2N2484UB SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC ST Microelectronics
57 2N2639 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
58 2N2640 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
59 2N2641 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola
60 2N2642 Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers Motorola


Datasheets found :: 1290
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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