No. |
Part Name |
Description |
Manufacturer |
31 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
32 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
33 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
34 |
2N1038 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
35 |
2N1039 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
36 |
2N1040 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
37 |
2N1041 |
PNP Germanium medium power transistor designed for relay drivers, pulse amplifiers, audio amplifiers and high-current switching applications |
Motorola |
38 |
2N1708 |
NPN Silicon transistor designed for very high-speed, low-power saturated switching applications for computers in military and industrial service |
Motorola |
39 |
2N1724 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
40 |
2N1725 |
NPN silicon power transistor designed for switching and aplifier applications |
Motorola |
41 |
2N1742 |
Germanium PNP high frequency transistor designed for driver applications, small-signal amplification, wide band video aplifiers, and VHF/UHF oscillators |
Motorola |
42 |
2N1893 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
43 |
2N1990 |
NPN silicon transistor designed for driving neon display tubes |
Motorola |
44 |
2N2224 |
NPN silicon annular transistor designed primarly for high speed switching applications |
Motorola |
45 |
2N2242 |
NPN silicon annular transistor designed for high-speed, low-power saturated switching applications |
Motorola |
46 |
2N2322 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
47 |
2N2323 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
48 |
2N2324 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
49 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
50 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
51 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
52 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
53 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
54 |
2N2484 |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
55 |
2N2484UA |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
56 |
2N2484UB |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
57 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
58 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
59 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
60 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
| | | |