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Datasheets for 35

Datasheets found :: 5256
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No. Part Name Description Manufacturer
121 2N2896 1.800W General Purpose NPN Metal Can Transistor. 90V Vceo, 1.000A Ic, 35 hFE. Continental Device India Limited
122 2N2944 Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 New Jersey Semiconductor
123 2N2945 Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 New Jersey Semiconductor
124 2N2946 Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 New Jersey Semiconductor
125 2N2946A Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 New Jersey Semiconductor
126 2N3133 Trans GP BJT NPN 35V 3-Pin TO-18 Box New Jersey Semiconductor
127 2N3134 Trans GP BJT NPN 35V 3-Pin TO-18 Box New Jersey Semiconductor
128 2N3137 Trans GP BJT NPN 35V 3-Pin TO-18 Box New Jersey Semiconductor
129 2N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE. Continental Device India Limited
130 2N3439 Trans GP BJT NPN 350V 1A 3-Pin TO-39 Box New Jersey Semiconductor
131 2N343A Trans GP BJT NPN 350V 1A 3-Pin TO-5 New Jersey Semiconductor
132 2N343B Trans GP BJT NPN 350V 1A 3-Pin TO-5 New Jersey Semiconductor
133 2N343C Trans GP BJT NPN 350V 1A 3-Pin TO-5 New Jersey Semiconductor
134 2N3496 0.400W General Purpose PNP Metal Can Transistor. 80V Vceo, 0.100A Ic, 35 hFE. Continental Device India Limited
135 2N3497 0.400W General Purpose PNP Metal Can Transistor. 120V Vceo, 0.100A Ic, 35 hFE. Continental Device India Limited
136 2N3499 1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. Continental Device India Limited
137 2N3501 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. Continental Device India Limited
138 2N3583 Complementary Medium-Power High Voltage Power Transistor 35W 1A Motorola
139 2N3584 Complementary Medium-Power High Voltage Power Transistor 35W 2A Motorola
140 2N3585 Complementary Medium-Power High Voltage Power Transistor 35W 2A Motorola
141 2N3870 SCRs 35 Ampere RMS, 100V Motorola
142 2N3871 SCRs 35 Ampere RMS, 200V Motorola
143 2N3872 SCRs 35 Ampere RMS, 400V Motorola
144 2N3873 SCRs 35 Ampere RMS, 600V Motorola
145 2N4240 Complementary Medium-Power High Voltage Power Transistor 35W 2A Motorola
146 2N4298 Trans GP BJT NPN 350V 1A New Jersey Semiconductor
147 2N4299 Trans GP BJT NPN 350V 1A New Jersey Semiconductor
148 2N4416A Trans JFET N-CH 35V 15mA 3-Pin TO-72 New Jersey Semiconductor
149 2N4429 Trans GP BJT NPN 35V 0.425A 4-Pin TO-117A New Jersey Semiconductor
150 2N5088 Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. USHA India LTD


Datasheets found :: 5256
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