| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
| 212 |
2N681 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 213 |
2N682 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 214 |
2N683 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 215 |
2N685 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 216 |
2N686 |
25A silicon controlled rectifier. Vrsom 350V. |
General Electric Solid State |
| 217 |
2N687 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 218 |
2N688 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 219 |
2N689 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 220 |
2N690 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 221 |
2N691 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 222 |
2N692 |
25 and 35 Amp RMS SCRs |
Knox Semiconductor Inc |
| 223 |
2N697A |
Trans GP BJT NPN 35V 3-Pin TO-39 Box |
New Jersey Semiconductor |
| 224 |
2N7002BK |
60 V, 350 mA N-channel Trench MOSFET |
Nexperia |
| 225 |
2N7002BK |
60 V, 350 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 226 |
2N7002PV |
60 V, 350 mA dual N-channel Trench MOSFET |
Nexperia |
| 227 |
2N7002PV |
60 V, 350 mA dual N-channel Trench MOSFET |
NXP Semiconductors |
| 228 |
2N7006 |
MOSPOWER N-Channel Enhancement Mode Transistor 350V 0.32A |
Siliconix |
| 229 |
2SA715 |
Trans GP BJT PNP 35V 2.5A 3-Pin TO-126 Mod |
New Jersey Semiconductor |
| 230 |
2SA882 |
Trans GP BJT PNP 35V 1A 3-Pin TO-126B-A1 |
New Jersey Semiconductor |
| 231 |
2SB633 |
Epitaxial Planar Silicon Transistor 85V/6A, AF 25 to 35W Output Applications |
SANYO |
| 232 |
2SB775 |
PNP Epitaxial Planar Silicon Transistor 85V/6A, AF 35W Output Applications |
SANYO |
| 233 |
2SC3053 |
150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 |
Isahaya Electronics Corporation |
| 234 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 235 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
| 236 |
2SC897 |
Silicon NPN Triple Diffused Transistor, intended for use in 35~50W Hi Fi Output |
Hitachi Semiconductor |
| 237 |
2SD613 |
85V/6A, AF 25 to 35W Output Applications |
SANYO |
| 238 |
2SD633P |
V(cbo): 100V; V(ceo): 85V; V(ebo): 6V; 6A; 60W; epitaxial planar silicon transistor. For 85V/6A, AF 35 to 45W output applications |
SANYO |
| 239 |
2SD895 |
NPN Triple Diffused Planar Silicon Transistor 85V/6A, AF 35W Output Applications |
SANYO |
| 240 |
2SK3557 |
N-Channel JFET, 15V, 10 to 32mA, 35mS, CP |
ON Semiconductor |
| | | |
